Author:
Hudait M. K.,Lin Y.,Sinha P. M.,Lindemuth J. R.,Ringel S. A.
Subject
General Physics and Astronomy
Reference49 articles.
1. Comparison of mixed anion, InAsyP1−y and mixed cation, InxAl1−xAs metamorphic buffers grown by molecular beam epitaxy on (100) InP substrates
2. 0.6-eV bandgap In/sub 0.69/Ga/sub 0.31/As thermophotovoltaic devices grown on InAs/sub y/P/sub 1-y/ step-graded buffers by molecular beam epitaxy
3. High-performance, 0.6-eV, Ga[sub 0.32]In[sub 0.68]As/InAs[sub 0.32]P[sub 0.68] thermophotovoltaic converters and monolithically interconnected modules
4. High-performance, lattice-mismatched InGaAs/InP monolithic interconnected modules (MIMs)
5. C. S. Murray, F. Newman, S. Murray, J. Hills, D. Aiken, R. Siergiej, B. Wernsman, and D. Taylor, 29th IEEE Photovoltaic Specialists Conference (IEEE, New York, 2002), p. 888.
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