Hot-wall-epitaxy growth and electrical/optical characterization of epitaxial BaAl2S4/GaAs layers-Reference-Cited by-同舟云学术

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Hot-wall-epitaxy growth and electrical/optical characterization of epitaxial BaAl2S4/GaAs layers

Published:2016-10 Issue: Volume:451 Page:120-125
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Jeong J.W.,Hong K.J.,Jeong T.S.,Youn C.J.

Funder

Chosun University

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference33 articles.

1. II-III2-VI4 compounds: Properties and trends for applications

2. Beyond the Binaries—The Chalcopyrite and Related Semiconducting Compounds

3. Mercury thiogallate mid-infrared femtosecond optical parametric generator pumped at 125 µm by a Cr:forsterite regenerative amplifier

4. Optical properties of undoped and Ho[sup 3+], Er[sup 3+], and Tm[sup 3+]-doped BaAl[sub 2]S[sub 4] and BaAl[sub 2]Se[sub 4] single crystals

5. M. Kobayashi, MRS Proceedings, 1394, mrsf11-1394-m09-01, 2012.

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Spectral behavior of the temperature-dependent photoresponse of BaAl2S4 layers grown by using hot-wall epitaxy;Journal of the Korean Physical Society;2016-08

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