II-III2-VI4 compounds: Properties and trends for applications-Reference-Cited by-同舟云学术

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II-III2-VI4 compounds: Properties and trends for applications

Published:1984-08 Issue: Volume:10 Page:403-412
ISSN:0146-3535
Container-title:Progress in Crystal Growth and Characterization
language:en
Short-container-title:Progress in Crystal Growth and Characterization

Author:

Radautsan S.I.,Georgobiani A.N.,Tiginyanu I.M.

Publisher

Elsevier BV

Subject

General Engineering

Reference25 articles.

1. Electro-photographical properties of CdGa2Se4;Abdullaev;Izv. Akad. Nauk Azerb. SSR, Ser. Fiz.-Tekh. Mat. Nauk,1977

2. Direct excitons in cadmium thiogallate;Areshkin;Fiz. Tekh. Poluprovodn.,1979

3. Excitonic wave modulated reflectance of CdGa2Se4;Bacewicz;Phys. Status Solidi B,1984

4. Narrow-band tuneable optical filter based on CdGa2S4;Badikov;Kvantovaya Elektron.,1981

5. Study of constitution diagrams of II-III-VI ternary systems;Derid,1978

Cited by 30 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Structural, optical and optoelectrical analysis of a new window layer based on ZnAl2S4 thin films;Journal of Materials Science: Materials in Electronics;2020-09-10

2. Phenomena of Radiative Recombination in Single Crystals of Cadmium Thiogallate with Cadmium (CdGa2S4:Cd) or Sulfur (CdGa2S4:S) Excess;IFMBE Proceedings;2019-09-18

3. Structural and Temperature-Dependent Electrical/Optical Behaviors of Hot-Wall Deposited BaGa2Se4 Layers;Journal of the Korean Physical Society;2018-07

4. Hot-wall-epitaxy growth and electrical/optical characterization of epitaxial BaAl2S4/GaAs layers;Journal of Crystal Growth;2016-10

5. Spectral behavior of the temperature-dependent photoresponse of BaAl2S4 layers grown by using hot-wall epitaxy;Journal of the Korean Physical Society;2016-08

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