Hall effect studies in germanium doped AlxGa1−xAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.332573
Reference27 articles.
1. Growth and evaluation of lpe graded composition AlxGa1−xAs layers for high efficiency graded bandgap solar cells
2. Transit-time-induced microwave negative resistance in Ga1−xAlxas—GaAs heterostructure diodes
3. Te and Ge — doping studies in Ga1−xAlxAs
4. Electrical properties of Ge‐dopedp‐type AlxGa1−xAs
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1. Hall Effect Studies of AlGaAs Grown by Liquid-Phase Epitaxy for Tandem Solar Cell Applications;Journal of Electronic Materials;2014-08-14
2. Hole mobility in AlxGa1−xSb grown by metalorganic chemical vapor deposition;Journal of Applied Physics;2002-11-15
3. ODMR Investigations of Ge Acceptors in p-Type Al0.4Ga0.6As;Materials Science Forum;1997-12
4. Photoreflectance study on carrier collisions in near-surface region of n-type GaAs grown by MOCVD;Applied Surface Science;1997-04
5. Influence of Carrier Scattering on Franz-Keldysh Effect in Near-Surface Region ofn-Type GaAs;Journal of the Physical Society of Japan;1997-03-15
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