Electrical properties of Ge‐dopedp‐type AlxGa1−xAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.326721
Reference17 articles.
1. Te and Ge — doping studies in Ga1−xAlxAs
2. Preparation of multilayer LPE heterostructures with crystalline solid solutions of AlxGa1−xAs: Heterostructure lasers
3. Reproducible Liquid‐Phase‐Epitaxial Growth of Double Heterostructure GaAs–AlxGa1−xAs Laser Diodes
4. Heterostructure Junction Lasers
5. Optical waveguides in GaAs–AlGaAs epitaxial layers
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2. Compositional and temperature dependence of the mobility and carrier concentration of a-AlxGa1−x As:H films;Renewable Energy;2001-11
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4. Photon-Number Squeezing in a Light-Emitting Diode Driven by a Constant-Voltage Source: Pump Regulation by the Non-Coulombic Effect;Japanese Journal of Applied Physics;2000-11-15
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