Thermal stability of surface and interface structure of atomic layer deposited Al2O3 on H-terminated silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2803727
Reference40 articles.
1. Atomic-layer-deposited Al2O3 thin films with thin SiO2 layers grown by in situ O3 oxidation
2. Physical and electrical properties of noncrystalline Al2O3 prepared by remote plasma enhanced chemical vapor deposition
3. Thermal annealing effects on the structural and electrical properties of HfO2/Al2O3 gate dielectric stacks grown by atomic layer deposition on Si substrates
4. Suppression of parasitic Si substrate oxidation in HfO2–ultrathin-Al2O3–Si structures prepared by atomic layer deposition
5. Excellent thermal stability of Al2O3/ZrO2/Al2O3 stack structure for metal–oxide–semiconductor gate dielectrics application
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3. Effects of laser wavelength on some of physical properties of Al2O3 nano films for optoelectronic device;2ND INTERNATIONAL CONFERENCE ON MATERIALS ENGINEERING & SCIENCE (IConMEAS 2019);2020
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