Excellent thermal stability of Al2O3/ZrO2/Al2O3 stack structure for metal–oxide–semiconductor gate dielectrics application
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1477266
Reference16 articles.
1. Hafnium and zirconium silicates for advanced gate dielectrics
2. Thermodynamic stability of binary oxides in contact with silicon
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4. Structure and stability of ultrathin zirconium oxide layers on Si(001)
5. Electron energy barriers between (100)Si and ultrathin stacks of SiO2, Al2O3, and ZrO2 insulators
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