Atomic-layer-deposited Al2O3 thin films with thin SiO2 layers grown by in situ O3 oxidation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1769090
Reference16 articles.
1. Study of ultrathin Al2O3/Si(001) interfaces by using scanning reflection electron microscopy and x-ray photoelectron spectroscopy
2. Physical and electrical properties of noncrystalline Al2O3 prepared by remote plasma enhanced chemical vapor deposition
3. Thermal annealing effects on the structural and electrical properties of HfO2/Al2O3 gate dielectric stacks grown by atomic layer deposition on Si substrates
4. Comparison of HfO2 films grown by atomic layer deposition using HfCl4 and H2O or O3 as the oxidant
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