GeSn p-i-n waveguide photodetectors on silicon substrates-Reference-Cited by-同舟云学术

GeSn p-i-n waveguide photodetectors on silicon substrates

Published:2014-12-08 Issue:23 Volume:105 Page:231109
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Peng Yu-Hsiang¹^ORCID,Cheng H. H.²,Mashanov Vladimir I.³,Chang Guo-En¹^ORCID

Affiliation:

1. Department of Mechanical Engineering and Advanced Institute of Manufacturing with High-tech Innovations, National Chung Cheng University, Chia-Yi County 62102, Taiwan

2. Center for Condensed Matter Sciences, National Taiwan University, Taipei 10617, Taiwan

3. Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, Lavrentjeva 13, Novosibirsk 630090, Russia

Funder

Ministry of Science and Technology, Taiwan (MOST)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4903881

Reference32 articles.

1. Silicon-based optoelectronics

2. Wiring electronics with light

3. Design of an electrically pumped SiGeSn/GeSn/SiGeSn double-heterostructure midinfrared laser

4. Design of a Si-based lattice-matched room-temperature GeSn/GeSiSn multi-quantum-well mid-infrared laser diode

5. Strain-Balanced ${\rm Ge}_{z}{\rm Sn}_{1-z}\hbox{--}{\rm Si}_{x}{\rm Ge}_{y}{\rm Sn}_{1-x-y}$ Multiple-Quantum-Well Lasers

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