Deposition of intrinsic, phosphorus‐doped, and boron‐doped hydrogenated amorphous silicon films at 50 °C
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.112882
Reference18 articles.
1. Defect formation during growth of hydrogenated amorphous silicon
2. Reduction of defects by high temperature annealing (150°C–240°C) in hydrogenated amorphous silicon films deposited at room temperature
3. The influence of deposition temperature and annealing temperature on the optoelectronic properties of hydrogenated amorphous silicon films
4. Hydrogen, microstructure and defect density in hydrogenated amorphous silicon
5. Device‐quality wide‐gap hydrogenated amorphous silicon films deposited by plasma chemical vapor deposition at low substrate temperatures.
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