Insitustudy of film stresses in metal silicides using absorption‐edge‐contour mapping
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.346384
Reference8 articles.
1. Nucleation‐controlled thin‐film interactions: Some silicides
2. The measurement of strain fields by X-ray topographic contour mapping
3. Measurement of thermal stress in Pd2Si film on Si(111) by absorption edge contour mapping
4. Observations of stresses in thin films of palladium and platinum silicides on silicon
5. An X-ray study of domain structure and stress in Pd2Si films at Pd-Si interfaces
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Mechanisms of Stress Generation in Thin Films and Coatings;Technical Physics;2020-12
2. In-situ study of stress evolution during solid state reaction of Pd with Si(001) using synchrotron radiation;Microelectronic Engineering;2003-11
3. Influence of Si substrate orientation on stress development in Pd silicide films grown by solid-state reaction;Applied Physics Letters;2003-08-18
4. Stresses arising from a solid state reaction between palladium films and Si(001) investigated byin situcombined x-ray diffraction and curvature measurements;Journal of Applied Physics;2003-08
5. Silicide formation at palladium surfaces. Part I: Crystalline and amorphous silicide growth at the Pd(110) surface;Surface Science;1998-05
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