Pulsed laser etching of silicon: Dopant profile modification and dopant desorption induced by surface melting-Reference-Cited by-同舟云学术

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Pulsed laser etching of silicon: Dopant profile modification and dopant desorption induced by surface melting

Published:1994-09 Issue:5 Volume:76 Page:3081-3087
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Desmur A.,Bourguignon B.,Boulmer J.,Ozenne J.‐B.,Budin J.‐P.,Débarre D.,Aliouchouche A.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.357490

Reference34 articles.

1. Laser-induced chemical etching of silicon in chlorine atmosphere

2. Time of flight study of low pressure laser etching of silicon by chlorine

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2. Growth of a SiC layer on Si(100) from adsorbed propene by laser melting;Journal of Applied Physics;2001-07

3. Photoinduced Effects in UV Laser Melting of Si in UHV;Physical Review Letters;1999-04-12

4. Enhanced photoluminescent emission of thin phosphor films via pulsed excimer laser melting;Journal of Materials Research;1998-11

5. XPS study of XeCl excimer-laser-etched InP;Applied Surface Science;1998-05

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