Growth of a SiC layer on Si(100) from adsorbed propene by laser melting
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1379054
Reference30 articles.
1. UHV-CVD heteroepitaxial growth of Si1−xGex alloys on Si(100) using silane and germane
2. Pseudomorphic Si1−yCy and Si1−x−yGexCy alloy layers on Si
3. Realization of heterostructures by pulsed laser induced epitaxy of C+ implanted pseudomorphic SiGe films and of a-SiGeC: H films deposited on Si(100)
4. Incorporation of substitutional carbon in Si and SiGe by laser processing in methane and propylene
5. Investigation of β-SiC precipitation in Si1−yCy epilayers by x-ray scattering at grazing incidence
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