Realization of heterostructures by pulsed laser induced epitaxy of C+ implanted pseudomorphic SiGe films and of a-SiGeC: H films deposited on Si(100)-Reference-Cited by-同舟云学术

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Realization of heterostructures by pulsed laser induced epitaxy of C+ implanted pseudomorphic SiGe films and of a-SiGeC: H films deposited on Si(100)

Published:1995-12 Issue:1-4 Volume:157 Page:436-441
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Boulmer J.,Boucaud P.,Guedj C.,Débarre D.,Bouchier D.,Finkman E.,Prawer S.,Nugent K.,Desmur-Larré A.,Godet C.,Roca i Cabarrocas P.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference24 articles.

1. Band‐edge and deep level photoluminescence of pseudomorphic Si1−x−yGexCyalloys

2. Chemical vapor deposition of heteroepitaxial Si1−x−yGexCy films on (100)Si substrates

3. Metastable SiGeC formation by solid phase epitaxy

4. Growth and strain compensation effects in the ternary Si1−x−yGexCyalloy system

5. Growth of an inverse tetragonal distorted SiGe layer on Si(001) by adding small amounts of carbon

Cited by 25 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Raman and Fourier transform infrared study of substitutional carbon incorporation in rapid thermal chemical vapor deposited Si1−x−yGexCy on (1 0 0) Si;Journal of Applied Physics;2010-01-15

2. Determination of substitutional carbon content in rapid thermal chemical vapour deposited Si1−x−yGexCy on Si (1 0 0) using Raman spectroscopy;Thin Solid Films;2010-01

3. Laser endotaxy in silicon carbide and PIN diode fabrication;Journal of Laser Applications;2008-05

4. High-resolution electron microscopy study of SiGeC thin films grown on Si(100) by laser-assisted techniques;Applied Surface Science;2006-04

5. Growth and modification of thin SiGeC films at low substrate temperatures through UV laser assisted processing;Applied Surface Science;2004-07

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