Electron traps in Ga(As,N) layers grown by molecular-beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1463214
Reference14 articles.
1. Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers
2. Admittance dispersion of n-type GaAs/Ga(As, N)/GaAs heterostructures grown by molecular beam epitaxy
3. Electrical depth profile of p-type GaAs/Ga(As, N)/GaAs heterostructures determined by capacitance–voltage measurements
4. Luminescence of as-grown and thermally annealed GaAsN/GaAs
5. Optical properties of low band gap GaAs(1−x)Nx layers: Influence of post-growth treatments
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