Investigation of LPE grown dilute nitride InGaAs(Sb)N layers for photovoltaic applications-Reference-Cited by-同舟云学术

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Investigation of LPE grown dilute nitride InGaAs(Sb)N layers for photovoltaic applications

Published:2019 Issue: Volume: Page:
ISSN:0094-243X
Container-title:AIP Conference Proceedings
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Author:

Milanova M.,Donchev V.,Terziyska P.,Valcheva E.,Georgiev S.,Kirilov K.,Asenova I.,Shtinkov N.,Karmakov Y.,Ivanov I. G.

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Link

http://aip.scitation.org/doi/pdf/10.1063/1.5091319

Reference26 articles.

1. Monolithic GaInNAsSb/GaAs VECSEL Operating at 1550 nm

2. High-power disk lasers based on dilute nitride heterostructures

3. Low-threshold strain-compensated InGaAs(N) (/spl lambda/ = 1.19-1.31 μm) quantum-well lasers

4. Refractive Index Profile in Photorefractive-Damage-Resistant Near-Stoichiometric Ti:Mg:Er: $\hbox{LiNbO}_{3}$ Strip Waveguide

5. Correlation of nitrogen related traps in InGaAsN with solar cell properties

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characteristics of a Dilute Nitride InGaAsN Double Quantum Well Laser at 1047 nm;2020 IEEE 26th International Symposium for Design and Technology in Electronic Packaging (SIITME);2020-10-21

2. Surface photovoltage spectroscopy of semiconductor materials for optoelectronic applications;Materials Research Express;2019-08-28

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