Author:
Khan Aurangzeb,Kurtz Sarah R.,Prasad S.,Johnston S. W.,Gou Jihua
Subject
Physics and Astronomy (miscellaneous)
Reference9 articles.
1. S. R. Kurtz, D. Myers, and J. M. Olsen, Proceedings of the 26th IEEE Photovoltaics Specialists Conference (IEEE, New York, 1997), p. 875.
2. InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs
3. Minority carrier diffusion, defects, and localization in InGaAsN, with 2% nitrogen
4. Electron traps in Ga(As,N) layers grown by molecular-beam epitaxy
5. Deep levels in p- and n-type InGaAsN for high-efficiency multi-junction III–V solar cells
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