Admittance dispersion of n-type GaAs/Ga(As, N)/GaAs heterostructures grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1391218
Reference22 articles.
1. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
2. Room-Temperature Operation of GaInNAs/GaInP Double-Heterostructure Laser Diodes Grown by Metalorganic Chemical Vapor Deposition
3. GaInNAs/GaAs multiple quantum wells grown by gas-source molecular beam epitaxy
4. GaInNAs/GaAs Quantum Well Growth by Chemical Beam Epitaxy
5. GaInNAs-GaAs long-wavelength vertical-cavity surface-emitting laser diodes
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