Optical gain characteristics in Al-rich AlGaN/AlN quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4875592
Reference25 articles.
1. Quaternary InAlGaN-based high-efficiency ultraviolet light-emitting diodes
2. Ultraviolet light-emitting diodes based on group three nitrides
3. 100 mW deep-ultraviolet emission from aluminium-nitride-based quantum wells pumped by an electron beam
4. Room-temperature deep-ultraviolet lasing at 241.5 nm of AlGaN multiple-quantum-well laser
5. Anisotropic polarization characteristics of lasing and spontaneous surface and edge emissions from deep-ultraviolet (λ≈240nm) AlGaN multiple-quantum-well lasers
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3. Optical net gain measurement on Al0.07Ga0.93N/GaN multi-quantum wells;Optics Express;2022-06-28
4. Achieving Optical Gain of the CsPbBr3 Perovskite Quantum Dots and Influence of the Variable Stripe Length Method;ACS Omega;2021-02-17
5. Material Gain Engineering in Staggered Polar AlGaN/AlN Quantum Wells Dedicated for Deep UV Lasers;IEEE Journal of Selected Topics in Quantum Electronics;2019-11
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