Direct determination of the electron effective mass of GaAsN by terahertz cyclotron resonance spectroscopy-Reference-Cited by-同舟云学术

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Direct determination of the electron effective mass of GaAsN by terahertz cyclotron resonance spectroscopy

Published:2015-08-10 Issue:6 Volume:107 Page:062103
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Eßer F.¹²,Drachenko O.¹,Patanè A.³,Ozerov M.⁴,Winnerl S.¹,Schneider H.¹,Helm M.¹²

Affiliation:

1. Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstraße 400, 01328 Dresden, Germany

2. Technische Universität Dresden, 01062 Dresden, Germany

3. School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, United Kingdom

4. Helmholtz-Zentrum Dresden-Rossendorf, Dresden High Magnetic Field Laboratory, Bautzner Landstraße 400, 01328 Dresden, Germany

Funder

Deutsche Forschungsgemeinschaft (DFG)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4928623

Reference29 articles.

1. Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers

2. Bowing parameter of the band-gap energy of GaNxAs1−x

3. Role of nitrogen in the mobility drop of electrons in modulation-doped GaAsN/AlGaAs heterostructures

4. Band Anticrossing in GaInNAs Alloys

5. Empirical tight-binding model for the electronic structure of dilute GaNAs alloys

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2. Electrical properties of heavily Si-doped GaAsN after annealing;Physica B: Condensed Matter;2022-01

3. Photoluminescence Mechanism in Heavily Si‐Doped GaAsN;Crystal Research and Technology;2021-02-08

4. Optical properties;Semiconductors (2nd Edition);2019-11

5. Si doping mechanism in Si doped GaAsN;Journal of Crystal Growth;2019-05

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