Formation of nickel germanide on SiO2-capped n-Ge to lower its Schottky barrier height
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4852177
Reference26 articles.
1. Ultrathin Strained-Ge Channel P-MOSFETs With High-$K$ /Metal Gate and Sub-1-nm Equivalent Oxide Thickness
2. Evidence for strong Fermi-level pinning due to metal-induced gap states at metal/germanium interface
3. Fermi-level pinning and charge neutrality level in germanium
4. Modulation of NiGe∕Ge Schottky barrier height by sulfur segregation during Ni germanidation
5. Modulation of NiGe/Ge Contact Resistance by S and P Co-introduction
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5. Ohmic contact formation of metal/amorphous-Ge/n-Ge junctions with an anomalous modulation of Schottky barrier height;Applied Physics Letters;2014-11-10
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