Modulation of NiGe/Ge Contact Resistance by S and P Co-introduction
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/4/i=2/a=021301/pdf
Reference8 articles.
1. Diffusion and activation of n-type dopants in germanium
2. Fermi-level pinning and charge neutrality level in germanium
3. Modeling of negatively charged states at the Ge surface and interfaces
4. Modulation of NiGe∕Ge Schottky barrier height by sulfur segregation during Ni germanidation
5. Low Temperature Phosphorus Activation in Germanium through Nickel Germanidation for Shallow n+/p Junction
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1. Investigation of NiGe Films Formed on Both n+- and p+-Ge with P and B Ion Implantation before Germanidation;ECS Journal of Solid State Science and Technology;2019
2. Germanium CMOS potential from material and process perspectives: Be more positive about germanium;Japanese Journal of Applied Physics;2017-10-30
3. Electrical properties of Ge crystals and effective Schottky barrier height of NiGe/Ge junctions modified by P and chalcogen (S, Se, or Te) co-doping;Applied Physics Letters;2016-09-05
4. High-Performance Germanium pMOSFETs With NiGe Metal Source/Drain Fabricated by Microwave Annealing;IEEE Transactions on Electron Devices;2016-07
5. Modulation of WN x /Ge Schottky barrier height by varying N composition of tungsten nitride;Chinese Physics B;2015-06-25
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