Modulation of WN x /Ge Schottky barrier height by varying N composition of tungsten nitride
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/24/7/077306/pdf
Reference19 articles.
1. Ultrathin Strained-Ge Channel P-MOSFETs With High-$K$ /Metal Gate and Sub-1-nm Equivalent Oxide Thickness
2. Diffusion and activation of n-type dopants in germanium
3. Fermi-level pinning and charge neutrality level in germanium
4. Increase in current density for metal contacts to n-germanium by inserting TiO2 interfacial layer to reduce Schottky barrier height
5. Fermi level de-pinning of aluminium contacts to n-type germanium using thin atomic layer deposited layers
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