Fermi level de-pinning of aluminium contacts to n-type germanium using thin atomic layer deposited layers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4858961
Reference31 articles.
1. Strained Ge channel p-type metal–oxide–semiconductor field-effect transistors grown on Si1−xGex/Si virtual substrates
2. Oxidation of Ge(100) and Ge(111) surfaces: an UPS and XPS study
3. Electrical characterization of germanium p-channel MOSFETs
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