Role of an interlayer at a TiN/Ge contact to alleviate the intrinsic Fermi-level pinning position toward the conduction band edge
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4870510
Reference19 articles.
1. Fermi-level pinning and charge neutrality level in germanium
2. Evidence for strong Fermi-level pinning due to metal-induced gap states at metal/germanium interface
3. Ohmic contact formation on n-type Ge by direct deposition of TiN
4. Fabrication of TiN/Ge Contact with Extremely Low Electron Barrier Height
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