Gallium free type II InAs/InAsxSb1-x superlattice photodetectors-Reference-Cited by-同舟云学术

Gallium free type II InAs/InAsxSb1-x superlattice photodetectors

Published:2012-08-13 Issue:7 Volume:101 Page:071111
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Schuler-Sandy T.¹,Myers S.¹,Klein B.¹,Gautam N.¹,Ahirwar P.¹,Tian Z.-B.¹,Rotter T.¹,Balakrishnan G.¹,Plis E.¹,Krishna S.¹

Affiliation:

1. Center for High Technology Materials, Department of Electrical and Computer Engineering, University of New Mexico, Albuquerque, New Mexico 87106, USA

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Reference21 articles.

1. Proposal for strained type II superlattice infrared detectors

2. Auger recombination in narrow-gap semiconductor superlattices incorporating antimony

3. Effect of interfacial formation on the properties of very long wavelength infrared InAs/GaSb superlattices

4. High Structural Quality of Type II InAs/GaSb Superlattices for Very Long Wavelength Infrared Detection by Interface Control

5. High Operability 1024$\,\times\,$1024 Long Wavelength Type-II Superlattice Focal Plane Array

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