Mid-wavelength infrared focal plane array based on type II InAs/GaSb superlattices on InP substrate-Reference-Cited by-同舟云学术

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Mid-wavelength infrared focal plane array based on type II InAs/GaSb superlattices on InP substrate

Published:2024-03 Issue: Volume:137 Page:105133
ISSN:1350-4495
Container-title:Infrared Physics & Technology
language:en
Short-container-title:Infrared Physics & Technology

Author:

Sato Masaki,Inada Hiroshi,Obi Hiroshi,Mori Hiroki,Fuyuki Takuma,Balasekaran Sundararajan,Kimura Daisuke,Machinaga Kenichi,Iguchi Yasuhiro,Muramatsu Yasuhiro,Murofushi Hiroshi,Sano Masahiko,Kudo Junichi,Kibe Michiya,Koyama Masatoshi

Publisher

Elsevier BV

Reference12 articles.

1. M. Razeghi, Technology of Quantum Devices, Springer US, 381 (2010).

2. Advanced InAs/GaSb superlattice photovoltaic detectors for very long wavelength infrared applications;Wei;Appl. Phys. Lett,2002

3. Band engineering HOT midwave infrared detectors based on type-II InAs/GaSb strained layer superlattices;Gautam;Infrared Phys. Techol.,2013

4. Gallium free type II InAs/InAsxSb1-x superlattice photodetectors;Schuler-Sandy;Appl. Phys. Lett.,2012

5. InAs/InAsSb Strained-Layer Superlattice Mid-Wavelength Infrared Detector for High-Temperature Operation;Ariyawansa;Micromachines,2019

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