Interface defects in Si∕HfO2-based metal-oxide-semiconductor field-effect transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1919397
Reference29 articles.
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2. Combining electrically detected magnetic resonance techniques to study atomic-scale defects generated by hot-carrier stressing in HfO2/SiO2/Si transistors;Journal of Applied Physics;2023-04-12
3. Atomic-layer-deposited (ALD) Al2O3 passivation dependent interface chemistry, band alignment and electrical properties of HfYO/Si gate stacks;Journal of Materials Science & Technology;2019-05
4. Random Nanosized Metal Grains and Interface-Trap Fluctuations in Emerging CMOS Technologies;Comprehensive Nanoscience and Nanotechnology;2019
5. Effect of the Chemical Oxide Layer Thickness on the Interfacial Quality of ALD-Grown HfO2 on Silicon;ECS Transactions;2010-04-16
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