Effect of the Chemical Oxide Layer Thickness on the Interfacial Quality of ALD-Grown HfO2 on Silicon
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Published:2010-04-16
Issue:2
Volume:28
Page:89-95
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ISSN:1938-5862
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Container-title:ECS Transactions
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language:
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Short-container-title:ECS Trans.
Author:
Li Shibin,Chen Zhi D.
Abstract
We report the effects of the thickness variation of the chemical oxide interfacial layer (IL) on the interfacial quality of the HfO2/Si system in this paper. Metal-oxide-semiconductor capacitors using the HfO2/IL gate oxide stack were fabricated using the Ni/Ti metal gate. The capacitance-voltage (C-V) and ellipsometry measurements suggest that the chemical oxide interfacial layer of ~0.45 nm is the minimum requirement for atomic layer deposition (ALD) growth of high quality HfO2 on silicon and thicker chemical oxide interfacial layers (>0.45 nm) result in better interfaces for HfO2 MOS structures with EOTs of < 1 nm.
Publisher
The Electrochemical Society