Toward a better understanding of the nanoscale degradation mechanisms of ultra-thin Si02/Si films: Investigation of the best experimental conditions with a conductive-atomic force microscope-Reference-Cited by-同舟云学术

Toward a better understanding of the nanoscale degradation mechanisms of ultra-thin Si02/Si films: Investigation of the best experimental conditions with a conductive-atomic force microscope

Published:2011-07 Issue:1 Volume:110 Page:014304
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Arinero R.,Hourani W.,Touboul A. D.,Gautier B.,Ramonda M.,Albertini D.,Militaru L.,Gonzalez-Velo Y.,Guasch C.,Saigné F.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3603037

Reference16 articles.

1. Ultimate limit for defect generation in ultra-thin silicon dioxide

2. Electrical characterization of stressed and broken down SiO2 films at a nanometer scale using a conductive atomic force microscope

3. Atomic force microscope topographical artifacts after the dielectric breakdown of ultrathin SiO2 films

4. Two-Trap-Assisted Tunneling Model for Post-Breakdown$I-V$Characteristics in Ultrathin Silicon Dioxide

5. Evaluation of Electrical Characteristics of the Copper-Metallized SPDT GaAs Switches at Elevated Temperatures

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