Similarity between the first ionized state of the oxygen vacancy double donor in tantalum oxide and the first ionized state of the cadmium vacancy double acceptor in cadmium sulfide
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2744485
Reference25 articles.
1. First principles study of oxygen vacancy defects in tantalum pentoxide
2. Electronic structure of oxygen vacancy in Ta2O5
3. Defect energy levels in HfO2 high-dielectric-constant gate oxide
4. Direct Observation of Anomalous Positive Charge and Electron-Trapping Dynamics in High-$k$ Films Using Pulsed-MOS-Capacitor Measurements
5. Photoconduction and trapping in sputtered tantalum oxide films
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3. Mechanisms of Difficulty to Correlate the Leakage Current of High-k Capacitor Structures with Defect States Detected Spectroscopically by the Thermally Stimulated Current Technique;Journal of The Electrochemical Society;2012
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