Hole traps associated with high-concentration residual carriers in p-type GaAsN grown by chemical beam epitaxy
Author:
Affiliation:
1. Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan
Funder
New Energy Development Organization (NEDO) under the Ministry of Economy, Trade and Industry, Japan
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4906991
Reference31 articles.
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5. S. R. Kurtz , D. Myers , and J. M. Olsen , inProceedings of the 26th IEEE Photovoltaics Specialists Conference( IEEE, New York, 1997), p. 875.
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1. Investigation of electric field effect on defects in GaAsN by admittance spectroscopy;Thin Solid Films;2022-09
2. N–H related defect playing the role of acceptor in GaAsN grown by chemical beam epitaxy;Journal of Crystal Growth;2017-06
3. Identification of N–H related acceptor defects in GaAsN grown by chemical beam epitaxy using hydrogen isotopes;Journal of Alloys and Compounds;2015-11
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