Quasidrift limited field-effect current in polycrystalline silicon: Wide grain boundary approximation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.368239
Reference15 articles.
1. The Sub-Threshold Characteristics of Polysilicon Thin-Film-Transistors
2. Transport properties of polycrystalline silicon films
3. Polycrystalline silicon thin film transistors
4. Theory of conduction in polysilicon: Drift-diffusion approach in crystalline-amorphous-crystalline semiconductor system—Part II: General I-V theory
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1. A Physics-Based Effective Mobility Model for Polycrystalline Silicon Thin Film Transistor Considering Discontinuous Energy Band at Grain Boundaries;Japanese Journal of Applied Physics;2011-09-20
2. A Physics-Based Effective Mobility Model for Polycrystalline Silicon Thin Film Transistor Considering Discontinuous Energy Band at Grain Boundaries;Japanese Journal of Applied Physics;2011-09-01
3. A comprehensive analytical on-current model for polycrystalline silicon thin film transistors based on effective channel mobility;Journal of Applied Physics;2008-05
4. An Effective Channel Mobility-Based Analytical On-Current Model for Polycrystalline Silicon Thin-Film Transistors;IEEE Transactions on Electron Devices;2007-04
5. Analysis of current flow in polycrystalline TFTs;IEEE Transactions on Electron Devices;2006-03
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