A comprehensive analytical on-current model for polycrystalline silicon thin film transistors based on effective channel mobility
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2917340
Reference24 articles.
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3. Assessment of the performance of laser-based lateral-crystallization technology via analysis and modeling of polysilicon thin-film-transistor mobility
4. On-current modeling of large-grain polycrystalline silicon thin-film transistors
5. On-State Drain Current Modeling of Large-Grain Poly-Si TFTs Based on Carrier Transport Through Latitudinal and Longitudinal Grain Boundaries
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