Observation of crystallographic wing tilt in cantilever epitaxy of GaN on silicon carbide and silicon (111) substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1415039
Reference19 articles.
1. Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase Epitaxy
2. Transmission electron microscopy of defects in GaN films formed by epitaxial lateral overgrowth
3. Microstructure of GaN laterally overgrown by metalorganic chemical vapor deposition
4. Dislocation density reduction via lateral epitaxy in selectively grown GaN structures
5. Structural and optical properties of GaN laterally overgrown on Si(111) by metalorganic chemical vapor deposition using an AlN buffer layer
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