Single carrier localization in InxGa1−xAs1−yNy investigated by magnetophotoluminescence
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1688003
Reference22 articles.
1. Resonant Raman scattering on localized states due to disorder inGaAs1−xPxalloys
2. Localized excitons in II-VI semiconductor alloys: Density-of-states model and photoluminescence line-shape analysis
3. Strain relaxation and exciton localization effects on the Stokes shift in InAsxP1−x/InP multiple quantum wells
4. Time-resolved photoluminescence studies of AlxGa1−xN alloys
5. Fluorescence line narrowing, localized exciton states, and spectral diffusion in the mixed semiconductorCdSxSe1−x
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