Quantum lifetimes and momentum relaxation of electrons and holes in Ga0.7In0.3N0.015As0.985/GaAs quantum wells
Author:
Publisher
Informa UK Limited
Subject
Condensed Matter Physics
Link
http://www.tandfonline.com/doi/pdf/10.1080/14786435.2010.525543
Reference41 articles.
1. GaInNAs long-wavelength lasers: progress and challenges
2. Dilute nitride GaInNAs and GaInNAsSb solar cells by molecular beam epitaxy
3. InGaAsN/AlGaAs P-n-p heterojunction bipolar transistor
4. GaInNAs/GaAs Bragg-mirror-based structures for novel 1.3μm device applications
5. 1.30-/spl mu/m GaInNAs laser diode with lifetime over 1000 hours grown by MOCVD
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