Forward current-voltage characteristics of an AlGaInP light-emitting diode
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2772530
Reference42 articles.
1. High-power truncated-inverted-pyramid (AlxGa1−x)0.5In0.5P/GaP light-emitting diodes exhibiting >50% external quantum efficiency
2. 1.4× efficiency improvement in transparent-substrate (AlxGa1−x)0.5In0.5P light-emitting diodes with thin (⩽2000 Å) active regions
3. Ultra-High Efficiency White Light Emitting Diodes
4. Obtaining the specific contact resistance from transmission line model measurements
5. Specific contact resistance using a circular transmission line model
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1. Optical, Electrical, and Thermal Performance;From LED to Solid State Lighting;2021-09-17
2. Electron Irradiation Degradation of AlGaInP/GaAs Light-Emitting Diodes;physica status solidi (a);2018-02-28
3. Charge Carrier Transport in LEDs Based on Multiple (Al x Ga1–x )0.5In0.5P/(Al0.54Ga0.46)0.5In0.5P Quantum Wells;Russian Physics Journal;2014-11
4. Recombination Currents in Light-Emitting Diodes based on (Al x Ga1–x )0.5In0.5P/(Al y Ga1–y )0.5In0.5P Multiple Quantum Wells;Russian Physics Journal;2013-12
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