Critical comparison of light‐induced changes in sub‐band‐gap absorption and photoconductivity in hydrogenated amorphous silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.100729
Reference7 articles.
1. Light-induced metastable defects in hydrogenated amorphous silicon: A systematic study
2. Direct measurement of gap-state absorption in hydrogenated amorphous silicon by photothermal deflection spectroscopy
3. Evidence for graphitic‐type bonding in glow discharge hydrogenated amorphous silicon carbon alloys
4. Influence of microstructure on the Urbach edge of amorphous SiC:H and amorphous SiGe:H alloys
5. Microstructure and the Urbach Edge in Glow Discharge Deposited a-SiC:H
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Distribution of the midgap density of states and their capture cross-sections in hydrogenated amorphous silicon deduced from space-charge-limited conduction in the dark and under illumination;Philosophical Magazine Letters;2005-04
2. Effective capture rates of carriers in amorphous hydrogenated silicon;Journal of Applied Physics;1996-08-15
3. Photoconductivity spectroscopy of hydrogenated amorphous silicon;Philosophical Magazine B;1994-08
4. Intrinsic deep-defect-related recombination process in hydrogenated amorphous silicon;Physical Review B;1994-03-15
5. Annealing kinetics ofa‐Si:H deposited by concentric‐electrode rf glow discharge at room temperature;Journal of Applied Physics;1993-02-15
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