Annealing kinetics ofa‐Si:H deposited by concentric‐electrode rf glow discharge at room temperature
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.353167
Reference42 articles.
1. Reversible conductivity changes in discharge‐produced amorphous Si
2. Hydrogen evolution and defect creation in amorphous Si: H alloys
3. Kinetics of the metastable optically induced ESR ina-Si:H
4. Optically induced conductivity changes in discharge‐produced hydrogenated amorphous silicon
5. Defect relaxation in amorphous silicon: Stretched exponentials, the Meyer-Neldel rule, and the Staebler-Wronski effect
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Hydrogen-plasma etching of hydrogenated amorphous silicon: a study by a combination of spectroscopic ellipsometry and trap-limited diffusion model;Philosophical Magazine;2004-02-21
2. Surface reactions in very low temperature (<150°C) hydrogenated amorphous silicon deposition, and applications to thin film transistors;Journal of Non-Crystalline Solids;2000-05
3. Effect of annealing on the electrical, optical and structural properties of hydrogenated amorphous silicon films deposited in an asymmetric R.F. plasma CVD system at room temperature;Solar Energy Materials and Solar Cells;1999-04
4. Influence of the substrate temperature on the photoelectric properties of HOMOCVD a-Si:H;Solar Energy Materials and Solar Cells;1995-01
5. Conditions for successful low-temperature growth of hydrogenated amorphous silicon film from silyl radicals conformed to layer-growth mode;Applied Surface Science;1994-05
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