Influence of microstructure on the Urbach edge of amorphous SiC:H and amorphous SiGe:H alloys
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.98721
Reference20 articles.
1. Evidence for graphitic‐type bonding in glow discharge hydrogenated amorphous silicon carbon alloys
2. An Assessment of a-SiGe:H Alloys with a Band GaP of 1.5Ev as to their Suitability for Solar Cell Applications
3. Properties and structure ofa‐SiC:H for high‐efficiencya‐Si solar cell
4. Influence of microstructure on the photoconductivity of glow discharge deposited amorphous SiC:H and amorphous SiGe:H alloys
5. Direct measurement of gap-state absorption in hydrogenated amorphous silicon by photothermal deflection spectroscopy
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