Interfacial interactions of evaporated iridium thin films with (100) GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.339562
Reference24 articles.
1. Phase formation and reaction kinetics in the thin‐film Co/GaAs system
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1. Electrochemical Deposition of Iridium onto Gallium Arsenide from a Sulfamate Electrolyte Based on Hexachloroiridic(IV) Acid;Russian Journal of Applied Chemistry;2023-12
2. The Ir-n-GaAs Schottky barrier contacts made by electrochemical deposition;Journal of Applied Physics;2014-06-14
3. Correlating the Schottky barrier height with the interfacial reactions of Ir gates for InAlAs∕InGaAs high electron mobility transistors;Applied Physics Letters;2006-11-20
4. High‐temperature stable Ir‐Al/n‐GaAs Schottky diodes;Applied Physics Letters;1994-04-04
5. Rapid thermal annealing induced reactions of Co/GaAs thin film structures: Studies using mass and energy dispersive recoil spectrometry;Journal of Applied Physics;1994-01-15
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