High‐temperature stable Ir‐Al/n‐GaAs Schottky diodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.111988
Reference9 articles.
1. NiAl/n‐GaAs Schottky diodes: Barrier height enhancement by high‐temperature annealing
2. Excellent thermal stability of cobaltaluminum alloy Schottky contacts on GaAs substrates
3. Thermal stability of coevaporated Al‐Pt thin films on GaAs substrates
4. High‐temperature stable MoAl2.7/n‐GaAs Schottky diodes with enhanced barrier height
5. Thermal stability of Mo–Al Schottky metallizations on n-GaAs
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1. Electrochemical Deposition of Iridium onto Gallium Arsenide from a Sulfamate Electrolyte Based on Hexachloroiridic(IV) Acid;Russian Journal of Applied Chemistry;2023-12
2. The Ir-n-GaAs Schottky barrier contacts made by electrochemical deposition;Journal of Applied Physics;2014-06-14
3. Schottky enhancement of contacts to n-GaAs via the exchange mechanism using NiAl[sub x]Ga[sub 1−x] as a metallization;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1999
4. Iridium-based multilayer contacts to n-GaAs;Solid-State Electronics;1998-03
5. Rh/n-GaAs contacts with and without sulfur passivation;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1996-11
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