Luminescence from Si/Si1−xGexheterostructures and superlattices
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.106512
Reference12 articles.
1. Theory of direct optical transitions in an optical indirect semiconductor with a superlattice structure
2. Structure and optical properties of strained Ge-Si superlattices grown on (001) Ge
3. Photoluminescence from Si/Ge superlattices
4. Photoluminescence in short-period Si/Ge strained-layer superlattices
5. Strain adjustment in ultra thin Si/Ge superlattices
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1. Optical Properties of Excitons in Structures of Reduced Dimensionality;Semiconductor Optics;2012
2. Ion-Beam-Induced Epitaxy and Solid Phase Epitaxy of Sigec on Si Formed by Ge and C Ion Implantation and their Structural and Optical Properties;MRS Proceedings;1995
3. Low-Temperature photoluminescence of SiGe/Si disordered multiple quantum wells and quantum well wires;Journal of Electronic Materials;1994-08
4. Band‐edge and deep level photoluminescence of pseudomorphic Si1−x−yGexCyalloys;Applied Physics Letters;1994-02-14
5. Si/SiGe heterostructures and devices;Thin Solid Films;1993-08
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