Microstructure research for ferroelectric origin in the strained Hf0.5Zr0.5O2 thin film via geometric phase analysis-Reference-Cited by-同舟云学术

Microstructure research for ferroelectric origin in the strained Hf0.5Zr0.5O2 thin film via geometric phase analysis

Published:2018-04-02 Issue:14 Volume:112 Page:143503
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Bi Han¹,Sun Qingqing²,Zhao Xuebing¹,You Wenbin¹,Zhang David Wei²,Che Renchao¹

Affiliation:

1. Laboratory of Advanced Materials, Department of Materials Science, Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), Fudan University, 220 Handan Road, Shanghai 200433, China

2. School of Microelectronics, Fudan University, 220 Handan Road, Shanghai 200433, China

Funder

National Natural Science Foundation of China

Science and Technology Commission of Shanghai Municipality

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5013093

Reference34 articles.

1. High-k dielectrics for future generation memory devices (Invited Paper)

2. Development of hafnium based high-k materials—A review

3. Impact of Zr addition on properties of atomic layer deposited HfO2

4. Effect of forming gas annealing on the ferroelectric properties of Hf0.5Zr0.5O2 thin films with and without Pt electrodes

5. Contribution of oxygen vacancies to the ferroelectric behavior of Hf0.5Zr0.5O2 thin films

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