Contribution of oxygen vacancies to the ferroelectric behavior of Hf0.5Zr0.5O2 thin films-Reference-Cited by-同舟云学术

Contribution of oxygen vacancies to the ferroelectric behavior of Hf0.5Zr0.5O2 thin films

Published:2015-03-16 Issue:11 Volume:106 Page:112904
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Shimizu Takao¹,Yokouchi Tatsuhiko²,Oikawa Takahiro²,Shiraishi Takahisa²,Kiguchi Takanori³,Akama Akihiro³,Konno Toyohiko J.³,Gruverman Alexei⁴,Funakubo Hiroshi¹²

Affiliation:

1. Materials Research Center for Element Strategy, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226-8503, Japan

2. Department of Innovative and Engineered Material, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226-8502, Japan

3. Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan

4. Department of Physics and Astronomy, University of Nebraska, Lincoln, Nebraska 68588, USA

Funder

Japan Society for the Promotion of Science (JSPS)

Ministry of Education, Culture, Sports, Science, and Technology (MEXT)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4915336

Reference33 articles.

1. Ferroelectricity in hafnium oxide thin films

2. High-k dielectrics for future generation memory devices (Invited Paper)

3. Development of hafnium based high-k materials—A review

4. Hafnium Oxide Based CMOS Compatible Ferroelectric Materials

5. Thin HfxZr1-xO2Films: A New Lead-Free System for Electrostatic Supercapacitors with Large Energy Storage Density and Robust Thermal Stability

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