Kinetics of the formation of C49 TiSi2from Ti‐Si multilayers as observed byinsitustress measurements
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.354481
Reference23 articles.
1. Mechanisms of Stress-Induced and Electromigration-Induced Damage in Passivated Narrow Metallizations on Rigid Substrates
2. Effects of stress in TiSi2gate metal‐oxide‐silicon structures
3. In situ strain measurements during the formation of platinum silicide films
4. Elastic constants and thermal expansion coefficient of metastable C49 TiSi2
5. Model for stress and volume changes of a thin film on a substrate upon annealing: Application to amorphous Mo/Si multilayers
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