Enhanced terahertz emission from strain-induced InGaAs/InAlAs superlattices-Reference-Cited by-同舟云学术

Enhanced terahertz emission from strain-induced InGaAs/InAlAs superlattices

Published:2019-04-21 Issue:15 Volume:125 Page:151605
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Ponomarev D. S.¹²³^ORCID,Gorodetsky A.⁴⁵^ORCID,Yachmenev A. E.¹²,Pushkarev S. S.¹^ORCID,Khabibullin R. A.¹²³,Grekhov M. M.⁶,Zaytsev K. I.²⁷^ORCID,Khusyainov D. I.⁸^ORCID,Buryakov A. M.⁸,Mishina E. D.⁸^ORCID

Affiliation:

1. Institute of Ultra High Frequency Semiconductor Electronics RAS, Moscow 117105, Russia

2. Prokhorov General Physics Institute of the Russian Academy of Sciences, 119991, Russia

3. Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny 141700, Russia

4. ITMO University, St. Petersburg 197101, Russia

5. Department of Chemistry, Imperial College London, London SW7 2AZ, United Kingdom

6. National Research Nuclear University MEPhI, Moscow 115409, Russia

7. Bauman Moscow State Technical University, Moscow 105005, Russia

8. MIREA–Russian Technological University, Moscow 119454, Russia

Funder

Russian Foundation for Basic Research

Russian Science Foundation

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5079697

Reference59 articles.

1. A polarization-insensitive plasmonic photoconductive terahertz emitter

2. Lateral terahertz hot-electron bolometer based on an array of Sn nanothreads in GaAs

3. Plasmonic amplification of terahertz radiation in a periodic graphene structure with the carrier injection

4. Enhancement of terahertz photoconductive antenna operation by optical nanoantennas

5. Photoelectric Properties of InAs/GaAs Quantum Dot Photoconductive Antenna Wafers

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