Application of in-cell touch sensor using photo-leakage current in dual gate a-InGaZnO thin-film transistors-Reference-Cited by-同舟云学术

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Application of in-cell touch sensor using photo-leakage current in dual gate a-InGaZnO thin-film transistors

Published:2012-11-19 Issue:21 Volume:101 Page:212104
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Hsieh Tien-Yu,Chang Ting-Chang,Chen Te-Chih,Chen Yu-Chun,Chen Yu-Te,Liao Po-Yung,Chu Ann-Kuo,Tsai Wu-Wei,Chiang Wen-Jen,Yan Jing-Yi

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4767912

Reference14 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. Fully Transparent ZnO Thin-Film Transistor Produced at Room Temperature

3. Double gate GaInZnO thin film transistors

4. Characteristics of Double-Gate Ga–In–Zn–O Thin-Film Transistor

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