Double gate GaInZnO thin film transistors-Reference-Cited by-同舟云学术

Double gate GaInZnO thin film transistors

Published:2008-08-11 Issue:6 Volume:93 Page:063505
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lim Hyuck,Yin Huaxiang,Park Jin-Seong,Song Ihun,Kim Changjung,Park JaeChul,Kim SunIl,Kim Sang-Wook,Lee Chang Bum,Kim Yong C.,Park Young Soo,Kang Donghun

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2967456

Reference9 articles.

1. Room temperature fabricated ZnO thin film transistor using high-K Bi1.5Zn1.0Nb1.5O7 gate insulator prepared by sputtering

2. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

3. Improvements in the device characteristics of amorphous indium gallium zinc oxide thin-film transistors by Ar plasma treatment

4. Amorphous gallium indium zinc oxide thin film transistors: Sensitive to oxygen molecules

5. D. K. Schroder,Semiconductor Material and Device Characterization, 2nd ed. (Wiley, New Jersey, 1976), p. 246.

Cited by 61 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of interface defects on electrical characteristics of a-ITGZO TFTs under bottom, top, and dual gatings;Heliyon;2024-07

2. Low temperature plasma deposited SiO2/organosilicon stacked film for transparent gate dielectric of InGaZnO thin film transistor;Thin Solid Films;2024-01

3. Split-Channel Dual-Gate High Voltage Thin Film Transistors;IEEE Transactions on Electron Devices;2024-01

4. Amorphous oxide semiconductors: From fundamental properties to practical applications;Current Opinion in Solid State and Materials Science;2023-08

5. Effect of dual gating on electrical characteristics of amorphous indium‐tin‐gallium‐zinc‐oxide TFTs;Electronics Letters;2023-07